| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which a refresh busy rate is small and power consumption is small. SOLUTION: The semiconductor memory device is provided with a source layer, a drain layer, a body region in which electric charges are accumulated to store logical data or which discharges electric charges and is in an electrically-afloating state, a gate electrode provided in the body region through a gate insulation film, word lines connected to the gate electrode, a word line driver, and a sense amplifier connected to first bit lines and second bit lines and detecting logical data of a memory cell, refresh operation includes first refresh operation making the first current flow to the body and second refresh operation making the second current from the body flow to the gate electrode in a period in which the first refresh operation is performed for a memory cell connected to the first bit line, the sense amplifier or the drive performs the first refresh operation for a memory cell connected to the second bit line. COPYRIGHT: (C)2009,JPO&INPIT
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