发明名称 |
Erbium-Doped Silicon Nanocrystalline Embedded Silicon Oxide Waveguide |
摘要 |
An erbium (Er)-doped silicon (Si) nanocrystalline embedded silicon oxide (SiOx) waveguide and associated fabrication method are presented. The method provides a bottom layer, and forms an Er-doped Si nanocrystalline embedded SiOx film waveguide overlying the bottom layer, having a minimum optical attenuation at about 1540 nanometers (nm). Then, a top layer is formed overlying the Er-doped SiOx film. The Er-doped SiOx film is formed by depositing a silicon rich silicon oxide (SRSO) film using a high density plasma chemical vapor deposition (HDPCVD) process and annealing the SRSO film. After implanting Er+ ions, the Er-doped SiOx film is annealed again. The Er-doped Si nanocrystalline SiOx film includes has a first refractive index (n) in the range of 1.46 to 2.30. The top and bottom layers have a second refractive index, less than the first refractive index.
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申请公布号 |
US2009232449(A1) |
申请公布日期 |
2009.09.17 |
申请号 |
US20080112767 |
申请日期 |
2008.04.30 |
申请人 |
ZHANG HAO;JOSHI POORAN CHANDRA;VOUTSAS APOSTOLOS T |
发明人 |
ZHANG HAO;JOSHI POORAN CHANDRA;VOUTSAS APOSTOLOS T. |
分类号 |
G02B6/26;B05D5/06;C23C14/16;C23C14/48;C23F1/00 |
主分类号 |
G02B6/26 |
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