发明名称 Methods for Formation of Substrate Elements
摘要 The present invention relates to methods of forming substrate elements, including semiconductor elements such as nanowires, transistors and other structures, as well as the elements formed by such methods.
申请公布号 US2009230380(A1) 申请公布日期 2009.09.17
申请号 US20080331150 申请日期 2008.12.09
申请人 NANOSYS, INC. 发明人 LEON FRANCISCO;LEMMI FRANCESCO;MILLER JEFFREY;DUTTON DAVID;STUMBO DAVID P.
分类号 H01L29/66;H01L21/28;H01L21/306 主分类号 H01L29/66
代理机构 代理人
主权项
地址