METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor substrate production method capable of producing a nitride semiconductor substrate with a small variation in off-axis angle.

SOLUTION: The method is a nitride semiconductor substrate production method comprising forming a nitride semiconductor layer 2 on a sapphire substrate 1 and fabricating a self-standing nitride semiconductor substrate 3 by using the nitride semiconductor layer 2 separated from the sapphire substrate 1, wherein the variation in axis C inclination defined as the difference of the maximum and minimum of radially outward inclinations in various points on the surface of the sapphire substrate 1 is 0.3-1°.

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