| 摘要 |
PROBLEM TO BE SOLVED: To prevent insufficient writing of video voltage to a pixel capacitor when using an amorphous silicon thin film transistor as a pixel transistor and a low-temperature polysilicon thin film transistor for a peripheral circuit. SOLUTION: A plurality of video lines is grouped by n (n≥3) picture lines, and a plurality of switching elements of a division switch circuit is grouped by n switching elements. Each pixel transistor is an amorphous silicon thin film transistor using amorphous silicon as a semiconductor layer, and each switching element of the division switch circuit is a polysilicon thin film transistor using polysilicon as a semiconductor layer. The writing time to a pixel to which video voltage is supplied through a switching element which is finally ON of each group is≥1/2 of one horizontal scanning period except the time when the switching element which is finally ON of each group. COPYRIGHT: (C)2009,JPO&INPIT
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