| 摘要 |
PROBLEM TO BE SOLVED: To provide a new manufacturing method of a material of a thin film of a compound structure which absorbs visible light and ultraviolet ray of the sunlight, and simultaneously contains Ge particles of nano-scale, and an anatase-type Ti oxide crystalline phase mainly as a matrix as a means for generating hydrogen at high efficiency. SOLUTION: An amorphous thin film constituted of Ge of ≥1 atomic fraction and ≤15 atomic fraction, and the balance consisting mainly of Ti and O is deposited by the high frequency sputtering method, and subjected to the heat treatment to manufacture a thin film material for a photoelectronic element for forming a compound structure which simultaneously contains Ge particles of nano-scale and the anatase-type Ti oxide crystalline phase mainly as a matrix. Preferably, the thin film is deposited in the oxygen-containing atmosphere of the oxygen flow fraction being ≤0.5, and the material is manufactured under the heat treatment condition of the atmosphere of vacuum, the temperature of 400-800°C, and the time for 15-90 minutes. COPYRIGHT: (C)2009,JPO&INPIT
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