| 摘要 |
Nitrogen supplied into the high dielectric constant film is prevented from leaving from the film. A semiconductor device manufacturing method, includes the steps of: nitriding a high dielectric constant film, formed on a substrate by using plasma, heat treating the nitrided high dielectric constant film, and transferring the heat treated substrate, wherein the nitriding step and the heat treating step are performed consecutively or simultaneously in the same substrate processing apparatus without exposing the substrate to air, and the step of transferring the substrate is performed while, the substrate is exposed to air.
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