| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that is integrated highly without falling off authenticity, and to provide a method of manufacturing a semiconductor device. SOLUTION: The semiconductor device includes aluminum stack structure, in which an aluminum layer is laminated just above a contact layer 40 and an aluminum layer. A first aluminum layer 10 is laminated just above the contact layer 40, a second aluminum layer 20 is laminated just above the first aluminum layer 10, and a third aluminum layer 30 is laminated just above the second aluminum layer 20. COPYRIGHT: (C)2009,JPO&INPIT
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