| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma doping method and apparatus capable of controlling the concentration of an impurity to be injected to a treatment substrate and the crystallized state. <P>SOLUTION: During plasma discharging, the surface of a treatment substrate is irradiated with lasers having a certain excitation wavelength, and the concentration of an impurity on the surface of the treatment substrate and the crystallized state are measured by scattered light. <P>COPYRIGHT: (C)2009,JPO&INPIT |
