Hochfrequenz-Halbleiteranordnung

摘要

A high-frequency semiconductor device includes an interconnection substrate (10) having one surface where a substrate high-frequency circuit (12) including a front ground (14) is formed and the other surface where a back ground (16) is formed, and peripheral bumps (41) including ground bumps placed on the periphery of a high-frequency semiconductor chip (30) with an interval equal to or less than a first prescribed length to surround the high-frequency semiconductor chip (30) where a chip high-frequency circuit (32) is formed. Conductive through holes (22) are placed in a region of the interconnection substrate (10) separated from a signal line (13) connected to a signal bump of the high-frequency semiconductor chip (30) by the first prescribed length or less and separated from the peripheral bumps (41) by the first prescribed length or less for connecting the front ground (14) and the back ground (16).