| 摘要 |
<p>A nonvolatile semiconductor memory device and a manufacturing method thereof are provided to prevent operation delay of a nonvolatile semiconductor memory device by reducing difference of a voltage boosting time between one end and the other end of a word line conductive layer. A plurality of memory cells is serially connected to a plurality of memory strings(MS). A first pillar shape semiconductor layer is vertically extended about a substrate. A charge accumulation layer is formed by interposing a first insulation layer(21) around the first pillar shape semiconductor layer. A first conductive layer(22) is formed by interposing a second insulation layer, and is included around the charge accumulation layer. The first conductive layer is expanded into two dimension. A surface of the first conductive layer is made of silicide films(311a~311d).</p> |
