| 摘要 |
A manufacturing method of a semiconductor device is provided to improve yield and electrical reliability of a metal line by preventing a void when a concave part inside a contact hole is filled. A bottom structure(102) is formed on a semiconductor substrate(100). An insulation film(106) in which a contact hole is formed is formed in order to expose the bottom structure. A first deposition film(110a) is formed on a top part of the insulation film. A plasma etching process is performed in order to expand an entrance of the concave part of the first deposition film. A second deposition film is formed on a top part of the first deposition film. The first deposition film is one among a tungsten film, a titanium nitride film, and a tantalum nitride film. Thickness of the first deposition film is 100Å~5,000Å.
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