发明名称 Method for producing a semiconductor device and the semiconductor device
摘要 In a method of manufacturing a semiconductor device which has rear electrodes extended from a front surface to a rear surface of a substrate, the rear electrodes are formed from a side of the front surface by forming a groove on the front surface, by forming a metal film on the groove, and by removing the substrate from a rear surface until the metal film is exposed on a bottom of the groove.
申请公布号 US2009230522(A1) 申请公布日期 2009.09.17
申请号 US20080077174 申请日期 2008.03.17
申请人 TECHNOLOGY ALLIANCE GROUP, INC. 发明人 OYAMADA SEISEI
分类号 H01L23/495;H01L21/00 主分类号 H01L23/495
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