| 摘要 |
A pumping voltage generating circuit of a semiconductor memory apparatus, the pumping voltage generating circuit includes a detecting unit configured to compare a level of a pumping voltage with a level of a reference voltage to generate a detection signal, an oscillating signal generator configured to sequentially generate a first oscillating signal and a second oscillating signal in response to the detection signal, and to elevate frequencies of the first and second oscillating signals when the second oscillating signal is generated, a first pump configured to perform a pumping operation in response to the first oscillating signal, and a second pump configured to perform a pumping operation in response to the second oscillating signal, wherein output terminals of the first pump and the second pump are commonly connected, and the pumping voltage is output at the output terminals of the first pump and the second pump.
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