SEMICONDUCTOR DEVICE WITH DUAL POLY SILICON GATE AND METHOD FOR FABRICATING THE SAME,申请号KR20070111101-传众专利搜索

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发明名称	SEMICONDUCTOR DEVICE WITH DUAL POLY SILICON GATE AND METHOD FOR FABRICATING THE SAME
摘要
申请公布号	KR100917617(B1)	申请公布日期	2009.09.17
申请号	KR20070111101	申请日期	2007.11.01
申请人		发明人
分类号	H01L27/092	主分类号	H01L27/092
代理机构		代理人
主权项
地址

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