发明名称 ESD PROTECTION DEVICE HAVING A STACK TYPE SCR WITH HIGH HOLDING VOLTAGE
摘要 An ESD protection device having a stack type SCR with high holding voltage is provided to increase the holding voltage while increasing the trigger voltage by forming the double spread structure. The semiconductor substrate(100) of the first conductivity type comprises the active region. The first well(141) and the second well(143) of the second conductive type are separated from each other within the active region of the semiconductor substrate. The third well(145) and fourth well(147) of the first conductivity type are separated from each other within the active region of the semiconductor substrate.
申请公布号 KR20090098237(A) 申请公布日期 2009.09.17
申请号 KR20080023481 申请日期 2008.03.13
申请人 FAIRCHILD KOREA SEMICONDUCTOR LTD. 发明人 RYU, JUN HYEONG;KANG, TAEG HYUN;KIM, MOON HO
分类号 H01L23/60 主分类号 H01L23/60
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