| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device capable of high-speed operation by achieving low resistance of a control gate electrode. SOLUTION: The nonvolatile semiconductor storage device is provided with: a charge storage layer 11 formed on a channel region of a semiconductor substrate 10; the control gate electrode 30 formed on the charge storage layer 11; a silicide layer 63 formed on the control gate electrode 30; and a word gate electrode 20 formed on the side of the control gate electrode 30 via an insulation layer 15. The top surface of the silicide layer 63 is flat. COPYRIGHT: (C)2009,JPO&INPIT
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