| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor element having an electrode to come in excellent ohmic contact with a p-type group-III nitride semiconductor layer including a nonpolar or semipolar surface as a principal surface, and to provide a method of manufacturing the same. SOLUTION: A semiconductor laser diode 70 has a p-type semiconductor layer 12 grown on a principal surface of a substrate 1 having a nonpolar surface as the principal surface. A growth principal surface 25 of a p-type GaN contact layer 19 in the p-type semiconductor layer 12, the principal surface being exposed from an insulating layer 6, is a nonpolar surface parallel to the principal surface of the substrate 1. Then a p-type electrode 4 is formed on the insulating layer 6 and the growth principal surface 25 of the p-type GaN contact layer 19, so that a lower layer principally containing Pt comes in contact with the growth principal surface 25 of the p-type GaN contact layer 19 exposed from the insulating layer 6. COPYRIGHT: (C)2009,JPO&INPIT
|
