| 摘要 |
A manufacturing method of an image sensor is provided to form a micro lens having a different shape according to photo diodes by performing a reflow process about exposed micro lens patterns after exposing the micro lens patterns. An insulation layer(140) is formed on a semiconductor substrate(100) in which at least one photo diode(120) is formed. A color filter layer(160) is formed on a front surface of the insulation layer, and corresponds to each photo diode. A micro lens pattern(200A) is formed on a front surface of the color filter layer, and corresponds to each photo diode. The micro lens patterns are exposed by using a front photo mask(240) having different light transmissivity according to colors. A micro lens having a different shape according to each photo diode is formed by performing a reflow process about the micro lens patterns. The front photo mask is made of a sub cell having different transmissivity according to a color of each pixel.
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