Organic silicon-oxide-based film, composition and method for forming the same, and semiconductor device

摘要

A method of forming an organic silica-based film, including: applying a composition for forming an insulating film for a semiconductor device, which is cured by using heat and ultraviolet radiation, to a substrate to form a coating; heating the coating; and applying heat and ultraviolet radiation to the coating to effect a curing treatment, wherein the composition includes organic silica sol having a carbon content of 11.8 to 16.7 mol%, and an organic solvent, the organic silica sol being a hydrolysis-condensation product produced by hydrolysis and condensation of a silane compound selected from compounds shown by the general formulae (1): R1Si(OR2)3 , (2): Si(OR3)4, (3): (R4)2Si(OR5)2, and (4): R6b(R7O)3-bSi-(R10)d-Si(OR8)3-cR9c.