DIODE AND FABRICATION METHOD THEREOF

摘要

A diode and a manufacturing method thereof are provided to prevent interference with an adjacent diode by improving the distribution of the ion implanted to the diode. An SEG(Selective Epitaxial Growth) layer(205A) is formed on a surface of the exposed semiconductor by patterning an interlayer dielectric layer(203) on the semiconductor substrate(201). An SEG layer is transformed into a metal silicide layer(207). The interlayer dielectric layer is removed up to the predetermined height. The ion is implanted to the SEG layer. The interlayer dielectric layer is removed by the cleaning process. The interlayer dielectric layer is a silicon oxide layer.