| 摘要 |
A shielded through-via that reduces the effect of parasitic capacitance between the through-via and surrounding wafer while providing high isolation from neighboring signals. A shield electrode is formed in the insulating region and spaced apart from the through-via. A coupling element couples at least the time-varying portion of the signal carried on the through-via to the shield electrode. This reduces the effect of any parasitic capacitance between the through-via and the shield electrode, hence the surrounding wafer.
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