| 摘要 |
A reading method of a nonvolatile memory device is provided to reduce distribution of a threshold voltage by reducing a sensing current in a reading process about a first page in case a program operation is performed in a second page. An nth page is provided as a reading object(410). A program state of n+1th page is determined(420). In the n+1th page is not programmed, Y direction interference about the nth page does not occur, and a reading operation is performed without a separate change subject(430). In case the n+1th page is programmed, Y direction interference about the nth page occurs, and a sensing current flowing in a reading operation is reduced and is supplied(440). The nth page is read according to the set sensing current(450). |
