摘要 |
<p>A method of tailoring the dopant profile of a substrate by utilizing two different dopants, each having a different diffusivity is disclosed. The substrate may be, for example, a solar cell. By introducing two different dopants, such as by ion implantation, furnace diffusion, or paste, it is possible to create the desired dopant profile. In addition, the dopants may be introduced simultaneously, partially simultaneously, or sequentially. Dopant pairs preferably consist of one lighter species and one heavier species, where the lighter species has a greater diffusivity. For example, dopant pairs such as boron and gallium, boron and indium, phosphorus and arsenic, and phosphorus and antimony, can be utilized.</p> |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES;BATEMAN, NICHOLAS, P.T.;GUPTA, ATUL;HATEM, CHRISTOPHER, R.;RAMAPPA, DEEPAK |
发明人 |
BATEMAN, NICHOLAS, P.T.;GUPTA, ATUL;HATEM, CHRISTOPHER, R.;RAMAPPA, DEEPAK |