发明名称 USE OF DOPANTS WITH DIFFERENT DIFFUSIVITIES FOR SOLAR CELL MANUFACTURE
摘要 <p>A method of tailoring the dopant profile of a substrate by utilizing two different dopants, each having a different diffusivity is disclosed. The substrate may be, for example, a solar cell. By introducing two different dopants, such as by ion implantation, furnace diffusion, or paste, it is possible to create the desired dopant profile. In addition, the dopants may be introduced simultaneously, partially simultaneously, or sequentially. Dopant pairs preferably consist of one lighter species and one heavier species, where the lighter species has a greater diffusivity. For example, dopant pairs such as boron and gallium, boron and indium, phosphorus and arsenic, and phosphorus and antimony, can be utilized.</p>
申请公布号 WO2009111668(A2) 申请公布日期 2009.09.11
申请号 WO2009US36238 申请日期 2009.03.05
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES;BATEMAN, NICHOLAS, P.T.;GUPTA, ATUL;HATEM, CHRISTOPHER, R.;RAMAPPA, DEEPAK 发明人 BATEMAN, NICHOLAS, P.T.;GUPTA, ATUL;HATEM, CHRISTOPHER, R.;RAMAPPA, DEEPAK
分类号 H01L21/22 主分类号 H01L21/22
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