| 摘要 |
<p>A semiconductor structure (10) includes a light emitting region (12) disposed between an n-type region and a p-type region. A wavelength converting material (20, 24, 27) configured to absorb a portion of the first light emitted by the light emitting region and emit second light is disposed in a path of the first light. A filter (22, 26, 32, 34) is disposed in a path of the first and second light. In some embodiments, the filter absorbs or reflects a fraction of first light at an intensity greater than a predetermined intensity. In some embodiments, the filter absorbs or reflects a portion of the second light. In some embodiments, a quantity of filter material is disposed in the path of the first and second light, then the CCT of the first and second light passing through the filter is detected. Filter material may be removed to correct the detected CCT to a predetermined CCT.</p> |
