| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an etchant composition for forming metal wiring for a thin-film transistor liquid display. <P>SOLUTION: The etchant composition used for etching a metal layer for the electrode of a thin-film transistor liquid display (TFT-LCD) contains, relative to the total weight of the etchant composition, 45 wt.% to 70 wt.% of phosphoric acid, 1.5 wt.% to 6 wt.% of nitric acid, 10 wt.% to 30 wt.% of acetic acid, 0.01 wt.% to 3 wt.% of a Mo etching adjustor, 0.1 wt.% to 1.999 wt.% of a sulfonic acid compound, and an amount of water for obtaining the 100 wt.% composition. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
