| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light receiving element that is easily manufactured, is high in photosensitivity and can be operated without applying bias voltage from the outside. SOLUTION: An InGaAs optical absorption layer 12 (first optical absorption layer), a p-type InP layer 13 (first secondary conductive semiconductor layer), an n-type InP layer 14 (first primary conductive semiconductor layer), an InGaAs optical absorption layer 15 (second optical absorption layer), and a p-type area 17 (second secondary conductive semiconductor layer) are formed on an n-type InP substrate 11 (primary conductive semiconductor substrate) in this order. An anode electrode 18 (first electrode) is connected with the p-type area 17, and a cathode electrode 19 (second electrode) is connected with the n-type InP substrate 11. The n-type InP layer 14 and the p-type InP layer 13 are electrically connected with each other by means of a metal electrode 23 (third electrode). The anode electrode 18, the cathode electrode 19 and the metal electrode 23 are electrically independent respectively. The metal electrode 23 is formed outside a light receiving area. COPYRIGHT: (C)2009,JPO&INPIT
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