| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a technology for preventing insufficiency of write-in of selection cells. <P>SOLUTION: The NAND type nonvolatile semiconductor memory includes: n memory cells (where n is an integer of 4 or more) connected in series to one another; and a driver which applies first voltage to a control gate electrode of a first memory cell being an object of programming out of n memory cells during programming, applies second voltage being lower than the first voltage to each of a control gate electrode of a second memory cell being adjacent to a source line side of the first memory cell and a control gate electrode of a third memory cell being adjacent to a bit line side of the first memory cell, and applies third voltage being lower than the second voltage to control gate electrodes of residual memory cells other than the first, the second, and the third memory cell out of n memory cells. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
