| 摘要 |
PROBLEM TO BE SOLVED: To provide a trench gate type insulated gate bipolar transistor which has low switching loss, a high withstand voltage, and soft switching characteristics wherein an ON voltage of a trench type IGBT is nearly as low as that of an IEGT. SOLUTION: The trench type IGBT includes trench gate constitution and has a second trench 5b formed even in a second channel region 3b (floating p layer), and a buried electrode 7b is formed in the second trench 5b through an insulating film 6. The buried electrode 7b is electrically connected to a second channel section region 3b-1 adjacent in a first trench 5a where at least a gate electrode 7 is formed in the second channel region 3b. COPYRIGHT: (C)2009,JPO&INPIT |
