发明名称 SUBSTRATE FILM FOR BACK GRINDING AND FORMING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a substrate film for back grinding that prevents a semiconductor wafer from being warped easily and has superior stability in dimension in a back grinding process of the thin-type semiconductor wafer. SOLUTION: In the substrate film for back grinding and a forming method thereof, the substrate film for back grinding has a hydrogen additive of a vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer and a (meta) acrylic acid alkylester-based polymer. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009206277(A) 申请公布日期 2009.09.10
申请号 JP20080046635 申请日期 2008.02.27
申请人 GUNZE LTD 发明人 OKAGAWA MASAAKI;SAGO SHIGERU;SAITO RYUTA
分类号 H01L21/304;B24B7/22;C09J7/02;H01L21/683 主分类号 H01L21/304
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