发明名称 |
SUBSTRATE FILM FOR BACK GRINDING AND FORMING METHOD THEREOF |
摘要 |
PROBLEM TO BE SOLVED: To provide a substrate film for back grinding that prevents a semiconductor wafer from being warped easily and has superior stability in dimension in a back grinding process of the thin-type semiconductor wafer. SOLUTION: In the substrate film for back grinding and a forming method thereof, the substrate film for back grinding has a hydrogen additive of a vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer and a (meta) acrylic acid alkylester-based polymer. COPYRIGHT: (C)2009,JPO&INPIT |
申请公布号 |
JP2009206277(A) |
申请公布日期 |
2009.09.10 |
申请号 |
JP20080046635 |
申请日期 |
2008.02.27 |
申请人 |
GUNZE LTD |
发明人 |
OKAGAWA MASAAKI;SAGO SHIGERU;SAITO RYUTA |
分类号 |
H01L21/304;B24B7/22;C09J7/02;H01L21/683 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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