| 摘要 |
<p>A phase change memory device and a method of manufacturing the same are provided to remove a deposition and patterning process of a thin film for forming a bit line by forming the bit line within an active region of the semiconductor. In a phase change memory device and a method of manufacturing the same, a bit line(120) is formed within the surface of an active region(110) of a semiconductor substrate(100). A bit line is formed through an impurity ion injection, and the semiconductor substrate comprises an plurality of active areas arranged along a second direction perpendicular to the first direction. A contact(180) is formed on the electrode(172), and a switching element is formed on the bit line.</p> |
