发明名称 |
SCANNING ELECTRON MICROSCOPE AND PATTERN DIMENSION MEASUREMENT METHOD USING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To overcome the problem that the measurement accuracy is deteriorated by a variation in an error between a dimension measurement value and an actually-measured pattern dimension depending on a cross-sectional shape of a pattern in a semiconductor pattern dimension measurement by a CD-SEM. SOLUTION: An AFM measurement result of a plurality of the patterns having different shapes is stored in a database in association with the dimension measurement error obtained by the AFM measurement result when the identical shape pattern is measured by the CD-SEM. When the dimension is actually measured, the AFM measurement result is obtained from a small number of regions in the to-be-measured pattern, and compared with the database. The dimension measurement error obtained by the CD-SEM measurement and corresponding to the most similar sidewall shape is referred. A corrected dimension has the reduced dimension error depending on the cross-sectional shape of the pattern, and is calculated by correcting the CD-SEM measurement result of the to-be-measured pattern based on the referred dimension measurement error. COPYRIGHT: (C)2009,JPO&INPIT
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申请公布号 |
JP2009204374(A) |
申请公布日期 |
2009.09.10 |
申请号 |
JP20080045400 |
申请日期 |
2008.02.27 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORP |
发明人 |
NAGATOMO WATARU;SHISHIDO CHIE;TANAKA MAKI |
分类号 |
G01B15/00;G01N23/225;H01J37/22;H01J37/28;H01L21/66 |
主分类号 |
G01B15/00 |
代理机构 |
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