发明名称 Semiconductor device and semiconductor device manufacturing method
摘要 The present invention provides a semiconductor device for which thermal stress at mounting is reduced and a reduction in reliability with regard to moisture absorption is prevented. The semiconductor device includes a uppermost metal layer 12, a solder bump 17, metals 15 and 16 which connect an uppermost metal layer 12 and the solder bump 17, and, a polyimide multilayer 14 having formed therein an opening 14x in which the metals 15 and 16 are provided. The polyimide multilayer 14 includes a first polyimide layer 14A and a second polyimide layer 14B formed on the first polyimide layer 14A. The second polyimide layer 14B is softer than the first polyimide layer 14A. A thermal stress at mounting is reduced by the second polyimide layer 14B. Since the first polyimide layer 14A has a higher strength than the second polyimide layer 14B, even if cracking occurs in the second polyimide layer 14B, the cracks are prevented from developing in the first polyimide layer 14A.
申请公布号 US2009224375(A1) 申请公布日期 2009.09.10
申请号 US20090379364 申请日期 2009.02.19
申请人 NEC ELECTRONICS CORPORATION 发明人 EDA TSUYOSHI
分类号 H01L23/58;H01L21/469 主分类号 H01L23/58
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