| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor apparatus including a PIN diode causing a larger avalanche current to flow by intentionally changing a current distribution within the plane of the diode corresponding to the direction of an off angle. <P>SOLUTION: An n<SP>-</SP>-SiC epitaxial growth layer 2 and a p<SP>+</SP>type layer 3 are successively formed on an n<SP>+</SP>-SiC substrate 1 whose main surface has the off angleθ, a guard ring 6 is formed around an element, and an ohmic electrode 4a is provided on the p<SP>+</SP>type layer 3. The ohmic electrode 4a is formed such that a distance L1 between the ohmic electrode 4a and the guard ring 6 on the side where a <0001> axis is inclined to the normal N of the SiC substrate 1 is larger than a distance L2 between the ohmic electrode 4a and the guard ring 6 on the opposite side. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
