发明名称 |
Laser element i.e. edge emitting laser diode, manufacturing method, involves partially stripping semiconductor contact layer, which are not covered by mask layer, to manufacture connector waveguide structure |
摘要 |
<p>The method involves providing a semi-conductor layer sequence (15) with an active region (4) suitable to produce electromagnetic radiation in electronic operation of a laser element. An electrical contact layer with an electrode layer is applied on the sequence. An electrically conductive reinforcing element is applied on the electrode layer. A connector like structured mask layer is produced on a subregion of the electrical contact layer. A semiconductor contact layer (7) is partially stripped in regions, which are not covered by the mask layer, to manufacture a connector waveguide structure. An independent claim is also included for a laser element with a connector waveguide structure.</p> |
申请公布号 |
DE102008015253(A1) |
申请公布日期 |
2009.09.10 |
申请号 |
DE20081015253 |
申请日期 |
2008.03.20 |
申请人 |
OSRAM OPTO SEMICONDUCTORS GMBH |
发明人 |
EICHLER, CHRISTOPH |
分类号 |
H01S5/20 |
主分类号 |
H01S5/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|