| 摘要 |
There is provided a method of fabricating a semiconductor device in which a gate electrode is formed on an oxide film, which is formed by thermal oxidation on a substrate. The fabrication method includes: a first step of forming a first oxide film on the substrate; a second step of thermally processing the first oxide film in an inactive gas atmosphere; a third step of forming a second oxide film that is obtained by etching the first oxide film, which has been thermally processed in the inactive gas, to a predetermined film thickness; and a fourth step of forming and thermally processing a gate electrode on the second oxide film.
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