发明名称 |
METHOD AND APPARATUS FOR CONTROLLING STRESSED LAYER GATE PROXIMITY |
摘要 |
A method includes receiving a performance distribution for a plurality of devices to be fabricated in a semiconductor process flow. A performance target for a particular device is specified based on the performance distribution. A stressed material is formed in a recess adjacent a gate electrode of a transistor in the particular device in accordance with at least one operating recipe. The recess is spaced from the gate electrode by a gate proximity distance. A target value for the gate proximity distance is determined based on the performance target. At least one parameter of the operating recipe is determined based on the target value for the gate proximity distance.
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申请公布号 |
US2009228132(A1) |
申请公布日期 |
2009.09.10 |
申请号 |
US20080045081 |
申请日期 |
2008.03.10 |
申请人 |
LENSING KEVIN R;VAID ALOK;PAL ROHIT |
发明人 |
LENSING KEVIN R.;VAID ALOK;PAL ROHIT |
分类号 |
G06F17/00 |
主分类号 |
G06F17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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