发明名称 VACUUM DEPOSITION METHOD
摘要 Vacuum deposition process for depositing at least one thin film on a surface portion of a substrate, characterized in that: at least one sputtering species that is chemically inactive or active with respect to a material to be sputtered is selected; a collimated beam of ions comprising predominantly said sputtering species is generated using at least one linear ion source positioned within an installation of industrial size; said beam is directed onto at least one target based on the material to be sputtered; and at least one surface portion of said substrate is positioned so as to face said target in such a way that said material sputtered by the ion bombardment of the target or a material resulting from the reaction of said sputtered material with at least one of the sputtering species is deposited on said surface portion.
申请公布号 US2009226735(A1) 申请公布日期 2009.09.10
申请号 US20050578938 申请日期 2005.04.15
申请人 SAINT-GOBAIN GLASS FRANCE 发明人 NADAUD NICOLAS;MATTMAN ERIC
分类号 B32B9/00;C03C17/00;C03C17/34;C03C17/36;C23C14/00;C23C14/02;C23C14/08;C23C14/18;C23C14/35;C23C14/46 主分类号 B32B9/00
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