发明名称 |
VACUUM DEPOSITION METHOD |
摘要 |
Vacuum deposition process for depositing at least one thin film on a surface portion of a substrate, characterized in that: at least one sputtering species that is chemically inactive or active with respect to a material to be sputtered is selected; a collimated beam of ions comprising predominantly said sputtering species is generated using at least one linear ion source positioned within an installation of industrial size; said beam is directed onto at least one target based on the material to be sputtered; and at least one surface portion of said substrate is positioned so as to face said target in such a way that said material sputtered by the ion bombardment of the target or a material resulting from the reaction of said sputtered material with at least one of the sputtering species is deposited on said surface portion.
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申请公布号 |
US2009226735(A1) |
申请公布日期 |
2009.09.10 |
申请号 |
US20050578938 |
申请日期 |
2005.04.15 |
申请人 |
SAINT-GOBAIN GLASS FRANCE |
发明人 |
NADAUD NICOLAS;MATTMAN ERIC |
分类号 |
B32B9/00;C03C17/00;C03C17/34;C03C17/36;C23C14/00;C23C14/02;C23C14/08;C23C14/18;C23C14/35;C23C14/46 |
主分类号 |
B32B9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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