| 摘要 |
A method is provided for controlling copper agglomeration on a substrate and for forming void-free bulk copper metal filling of recessed features in integrated circuits. In one embodiment, the method includes providing a substrate having a topography including a top surface and at least one recessed feature comprising at least a sidewall surface and a bottom surface, depositing a barrier film on the substrate topography, and depositing a metal-containing wetting film on the barrier film. The method further includes physical vapor depositing copper metal on the metal-containing wetting film, where the substrate temperature is sufficiently high to form a smooth copper metal seed layer on the metal-containing wetting film. Void-free bulk copper metal may be plated in the at least one recessed feature.
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