DEVICE MANUFACTURING PROCESS UTILIZING A DOUBLE PATTERNING PROCESS

摘要

A process for manufacturing a semiconductor device using a multiple exposure patterning process has the steps of: a) providing a coated semiconductor substrate with an antireflective coating or an underlayer, b) applying in a first coating step, a first photosensitive composition over the coated semiconductor substrate to produce a bilayer stack, c) exposing the first photosensitive composition in the bilayer stack in a imagewise manner to actinic radiation in a first exposure step to produce a first pattern, d) developing the exposed first photosensitive composition in an aqueous base developer to produce an imaged bilayer stack containing a relief image, e) rinsing the imaged bilayer stack containing the relief image with an aqueous liquid optionally containing a surfactant, f) applying a fixer solution to the imaged bilayer stack to stabilize (fix) the relief image, g) applying an optional bake step, h) rinsing the imaged bilayer stack containing the stabilized image with a liquid optionally containing a surfactant, i) applying a second optional bake step, j) applying in a second coating step a second photosensitive composition onto the imaged bilayer stack to produce a multilayer stack, k) exposing the second photosensitive composition in the multilayer stack in an imagewise manner to actinic radiation in a second exposure step to produce a second pattern in which the second pattern is offset from the first pattern by a predetermined amount, I) developing the exposed second photosensitive composition in an aqueous base developer to produce an imaged multilayer stack containing a second relief image, and m) rinsing the imaged multilayer stack containing the second relief image with an aqueous liquid optionally containing a surfactant; wherein the first and second photosensitive compositions each comprise a photoacid generator and a substantially aqueous base insoluble polymer whose aqueous base solubility increases upon treatment with acid and further comprises an anchor group, and the fixer solution comprises a polyfunctional fixer compound which is reactive with the anchor group, but does not contain silicon and wherein the semiconductor substrate stays within a lithographic cell from at least the first coating step until at least after the final exposure.