FLASH MEMORY DEVICE AND ERASE METHOD THEREOF

摘要

A flash memory device and an erasing method thereof are provided to perform a 1 bit erasing operation by changing a state of a memory cell designated by a row address and a column address. A memory cell array(110) comprises a plurality of blocks having memory cells arranged in a cross region of rows and columns. A row selection circuit(120) selects a block in response to a first row address. A page buffer circuit(130) senses data stored to the memory cells of the selected block, or writes the data to the memory cells. A data buffer circuit(170) stores data sensed through the page buffer circuit in 1 bit erasing operation. The data buffer circuit changes the data of the memory cell in which the 1 bit erasing operation among stored data is performed into an erasing state in response to a second row address and a column address. The data of the data buffer circuit is written to the memory cells corresponding to the block selected by the page buffer circuit.