| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for forming a pattern and a pattern forming material to be used for the method for forming a high aspect etching pattern without accompanying positive-negative reverse or increasing the number of dry etching steps. <P>SOLUTION: A film containing water-soluble titanium is formed on a photoresist pattern after developed to deposit a material containing titanium on the surface of the photoresist pattern. The material containing titanium is removed except for the material on the photoresist film so as to protect only the surface of the photoresist pattern with titanium. By this method, a high aspect etching pattern can be formed without accompanying positive-negative reverse or increase in the number of dry etching. The resist pattern hard mask process includes the same number of dry etching steps as a single layer resist process. Although steps of applying a protective film material after developing a resist, baking and stripping the film with pure water are added to the single layer resist process, no special device is required but a conventional track system can be used. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
