| 摘要 |
<p>A method for fabricating a reflection type photo-mask is provided to the uniformity of critical pattern dimension by preventing a shadow effect. A reflection layer(310) is formed on a mask substrate(300), and a resist pattern that exposes a region at which an absorption layer is formed is formed. By etching the reflecting layer with the resist pattern, an opening is formed to expose the substrate to the region at which an abruption layer is formed. The resist pattern is removed, and the absorption layer that is buried in the opening is formed. The reflection layer is formed by alternatively depositing a molybdenum and silicon film.</p> |
