发明名称 |
Optimized metal fuse process in semiconductor device |
摘要 |
<p>A metal fuse process that uses a thinner (e.g., 6000Å) oxide (108) over the top interconnect (102). The oxide (108) is removed over the probe pads (106) for testing but is not removed over the fuses (104). Because the oxide (108) is thin at the upper corners of the fuse (104), the oxide (108) cracks over the fuse (104) during a laser pulse (114). A wet etch is then used to dissolve the exposed fuses (104).</p> |
申请公布号 |
EP1211723(B1) |
申请公布日期 |
2009.09.09 |
申请号 |
EP20010000649 |
申请日期 |
2001.11.21 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
HEWSON, MELISSA M.;JACKSON, RICKY A.;SINGH, ABHA;TRAN, TOAN;TIGELAAR, HOWARD |
分类号 |
H01L21/66;H01L21/82;H01L23/525 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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