| 摘要 |
A method of manufacturing a silicon substrate is provided to prevent a particle and improve production yield of a CCD by preventing a defect within a transistor of a CCD and a buried photo diode. In a method of manufacturing a silicon substrate, a silicon single crystal is sliced(S1). The silicon single crystal is processed(S2). An epitaxial layer is formed on the sliced silicon single crystal(S3), and a post-annealing is performed In 600°C to 850°C(S4). The internal pressure of a furnace is between 1.33 kPa to 26.7 kPa under the inert gas, and a thermal process is performed for 0.25~4hours under a condition that the oxygen and the inert gas.
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