发明名称 |
Technique for efficiently patterning an underbump metallization layer using a dry etch process |
摘要 |
By patterning the underbump metallization layer stack on the basis of a dry etch process, significant advantages may be achieved compared to conventional techniques involving a highly complex wet chemical etch process. In particular embodiments, a titanium tungsten layer or any other appropriate last layer of an underbump metallization layer stack may be etched on the basis of a plasma etch process using a fluorine-based chemistry and oxygen as a physical component. Moreover, appropriate cleaning processes may be performed for removing particles and residues prior to and after the plasma-based patterning process. |
申请公布号 |
US7585759(B2) |
申请公布日期 |
2009.09.08 |
申请号 |
US20060382135 |
申请日期 |
2006.05.08 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
KUECHENMEISTER FRANK;PLATZ ALEXANDER;JUNGNICKEL GOTTHARD;SIURY KERSTIN |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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