| 摘要 |
<p>A nonvolatile semiconductor memory device and an operating method thereof are provided to implement high integration of the semiconductor memory device by forming a phase transition memory cell with the same structure as a transistor. A phase transition pattern(101) is arranged on a substrate(110) and includes a plurality of data storages(140a,140b) with resistance varied by the phase transition. A plurality of resistance electrodes(120a,120b) are electrically connected to the plurality of data storages and generate the heat consumed for the phase transition. The plurality of resistance electrodes include a first resistance electrode and a second resistance electrode. The plurality of resistance electrodes are arranged on a substrate adjacent to both sides of the phase transition pattern. The phase transition pattern includes an insulating layer(130) and a gate electrode(150) which are arranged on the substrate.</p> |
