| 摘要 |
A method for making a crystalline wafer, in which an interface layer is associated with a support substrate. A first layer is associated with the interface layer in a strained state. The interface layer is melted sufficiently to substantially uncouple the first layer from the support substrate to relax the first layer from the strained state to a relaxed state. The interface material is solidified with the first layer in the relaxed state to obtain a first wafer.
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