发明名称 |
ION IMPLANTING APPARATUS AND ION IMPLANTING METHOD |
摘要 |
At the time of injecting ions of positive charges into an object substrate, a charge-up damage may occur in the object substrate. In order that the object substrate may be less charged up by emitting secondary electrons at the time of injecting the ions of positive charges, a conductive member is disposed at a position to confront the object substrate, thereby to ground the conductive member electrically in high frequencies to the earth. Alternatively, the field intensity to occur in the object substrate may also be reduced by controlling the RF power to be applied to the object substrate, in a pulsating manner.
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申请公布号 |
KR20090094842(A) |
申请公布日期 |
2009.09.08 |
申请号 |
KR20097014713 |
申请日期 |
2007.12.20 |
申请人 |
TOKYO ELECTRON LIMITED;NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY |
发明人 |
OHMI TADAHIRO;GOTO TETSUYA;TERAMOTO AKINOBU;MATSUOKA TAKAAKI |
分类号 |
H01J37/317;H01J37/32;H01L21/265;H05H1/46 |
主分类号 |
H01J37/317 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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