COMPOSITION FOR FORMING RESIST FOUNDATION FILM CONTAINING LOW MOLECULAR WEIGHT DISSOLUTION ACCELERATOR

摘要

Disclosed is an antireflective film-forming composition for forming an antireflective film which is used in a lithography process in semiconductor device production and can be developed by an alkaline developer for photoresists. Also disclosed is a method for forming a photoresist pattern by using such an antireflective film-forming composition. Specifically disclosed is a composition for forming a resist foundation film used in a lithography process in semiconductor device production, which contains an alkali-soluble resin (a), a polynuclear phenol (b), a compound (c) having at least two vinyl ether groups and a photoacid generator (d). The alkali-soluble resin (a) is a polymer containing a unit structure having a carboxyl group; and the polynuclear phenol (b) is a compound having 2-30 phenolic hydroxy groups in a molecule.